BC849BLT3
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- Mfr.Part #
- BC849BLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 15,493
- In Stock ：
- 15,493
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Power Dissipation :
- 300mW
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- Published :
- 2007
- hFE Min :
- 200
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 600mV
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 600mV
- Current Rating :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JEDEC-95 Code :
- TO-236AB
- Reach Compliance Code :
- not_compliant
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- 30V
- JESD-30 Code :
- R-PDSO-G3
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 240
- Datasheets
- BC849BLT3
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849BLT3 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC849BLT3 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT3 Applications
There are a lot of ON Semiconductor
BC849BLT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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