BC849BLT1
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- Mfr.Part #
- BC849BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 38,067
- In Stock ：
- 38,067
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 30V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 30V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30V
- Width :
- 1.3mm
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- hFE Min :
- 200
- Current Rating :
- 100mA
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Published :
- 2007
- Pin Count :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 940μm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 30V
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 600mV
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Length :
- 2.9mm
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Datasheets
- BC849BLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849BLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC849BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT1G Applications
There are a lot of ON Semiconductor
BC849BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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