BC849B
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- Mfr.Part #
- BC849B
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Power - Max :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC849
- Published :
- 2008
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-30 Code :
- R-PDSO-G3
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 100mA
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Power Dissipation-Max (Abs) :
- 0.225W
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Datasheets
- BC849B
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849B-TP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
BC849B-TP Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 500mV @ 5mA, 100mA
a transition frequency of 100MHz
BC849B-TP Applications
There are a lot of Micro Commercial Co
BC849B-TP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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