BC848CWT1G
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- Mfr.Part #
- BC848CWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SC70-3
- Stock
- 135,737
- In Stock ：
- 135,737
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Voltage - Rated DC :
- 30V
- Published :
- 2005
- Collector Emitter Voltage (VCEO) :
- 30V
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 150mW
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Width :
- 1.35mm
- Number of Elements :
- 1
- hFE Min :
- 270
- JESD-609 Code :
- e3
- Length :
- 2.2mm
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Height :
- 900μm
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Max Power Dissipation :
- 150mW
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Current Rating :
- 100mA
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- 600mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- BC848CWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC848CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CWT1G Applications
There are a lot of ON Semiconductor
BC848CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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