BC848CWT1
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- Mfr.Part #
- BC848CWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 30V 100MA SOT-323
- Stock
- 33,083
- In Stock ：
- 33,083
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 270
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 150mW
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Width :
- 1.35mm
- Package / Case :
- SC-70, SOT-323
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 600mV
- Voltage - Rated DC :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 45V
- Surface Mount :
- yes
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 150mW
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Pin Count :
- 3
- Element Configuration :
- Single
- Current Rating :
- 100mA
- Height :
- 900μm
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Published :
- 2005
- Length :
- 2.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- BC848CWT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC848CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CWT1G Applications
There are a lot of ON Semiconductor
BC848CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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