BC848CW
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- Mfr.Part #
- BC848CW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Frequency :
- 300MHz
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- ECCN Code :
- EAR99
- Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Weight :
- 6.010099mg
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 30V
- Length :
- 2.2mm
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 600mV
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Transition Frequency :
- 300MHz
- Height :
- 1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Type :
- NPN
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.35mm
- Datasheets
- BC848CW
NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CW-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.
BC848CW-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848CW-7-F Applications
There are a lot of Diodes Incorporated
BC848CW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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