BC848CDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Number of Pins :

6

Collector Emitter Saturation Voltage :

600mV

Gain Bandwidth Product :

100MHz

Transistor Type :

2 NPN (Dual)

Current - Collector Cutoff (Max) :

15nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Collector Base Voltage (VCBO) :

30V

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

30V

Max Breakdown Voltage :

30V

Width :

1.35mm

Contact Plating :

Tin

Lead Free :

Lead Free

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Published :

2007

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Power Dissipation :

380mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

380mW

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ

hFE Min :

420

JESD-609 Code :

e3

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

30V

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

100MHz

Polarity :

NPN

Voltage - Rated DC :

30V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Surface Mount :

yes

Length :

2.2mm