BC848BW
- Mfr.Part #
- BC848BW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 31,740
- In Stock :
- 31,740
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Height :
- 1mm
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- Pin Count :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 300MHz
- Operating Temperature :
- -65°C~150°C TJ
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Factory Lead Time :
- 15 Weeks
- Contact Plating :
- Tin
- Transition Frequency :
- 300MHz
- hFE Min :
- 200
- Collector Emitter Voltage (VCEO) :
- 30V
- Weight :
- 6.010099mg
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Type :
- NPN
- Length :
- 2.2mm
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 300MHz
- Published :
- 2007
- Width :
- 1.35mm
- Datasheets
- BC848BW

NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848BW-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.A maximum collector current of 100mA volts can be achieved.
BC848BW-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848BW-7-F Applications
There are a lot of Diodes Incorporated
BC848BW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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