BC848BLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Number of Pins :

3

Height :

940μm

Surface Mount :

yes

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

30V

Type :

GENERAL PURPOSE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

30V

Transistor Application :

SWITCHING

Width :

1.3mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Surface Mount

Power Dissipation :

300mW

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Frequency :

100MHz

Noise Figure :

10 dB

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

30V

Transistor Type :

NPN

Pin Count :

3

Terminal Form :

Gull wing

Voltage - Rated DC :

30V

Max Breakdown Voltage :

30V

hFE Min :

200

Max Power Dissipation :

300mW

Collector Emitter Saturation Voltage :

600mV

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Pbfree Code :

yes

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Published :

2003

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Current Rating :

100mA

Number of Terminations :

3

Gain Bandwidth Product :

100MHz

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

REACH SVHC :

No SVHC