BC848ALT1G
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- Mfr.Part #
- BC848ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 5,006
- In Stock ：
- 5,006
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Current Rating :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Radiation Hardening :
- No
- Height :
- 1.01mm
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 30V
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.4mm
- Collector Emitter Saturation Voltage :
- 600mV
- Max Power Dissipation :
- 300mW
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Length :
- 3.04mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 110
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2007
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Datasheets
- BC848ALT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC848ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC848ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848ALT1G Applications
There are a lot of ON Semiconductor
BC848ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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