BC848ALT1
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- Mfr.Part #
- BC848ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 100MA SOT23
- Stock
- 2,493
- In Stock ：
- 2,493
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.01mm
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Surface Mount :
- yes
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Max Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Published :
- 2007
- hFE Min :
- 110
- Collector Base Voltage (VCBO) :
- 30V
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 600mV
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Length :
- 3.04mm
- Power Dissipation :
- 300mW
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BC848ALT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC848ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC848ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848ALT1G Applications
There are a lot of ON Semiconductor
BC848ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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