BC847W,135
- Mfr.Part #
- BC847W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847W - SMALL SIGN
- Stock
- 970,137
- In Stock :
- 970,137
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Pins :
- 3
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC847
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- NPN
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC847W,135

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847W,135 Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC847W,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847W,135 Applications
There are a lot of Nexperia USA Inc.
BC847W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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