BC847CTT1
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- Mfr.Part #
- BC847CTT1
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC75 SOT416
- Stock
- 42,828
- In Stock ：
- 42,828
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 45V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC847*TT
- Current Rating :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Published :
- 2009
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Pin Count :
- 3
- Power Dissipation :
- 300mW
- JESD-609 Code :
- e0
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Package / Case :
- SC-75, SOT-416
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Lead Free :
- Contains Lead
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 225mW
- Peak Reflow Temperature (Cel) :
- 240
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- hFE Min :
- 270
- Terminal Position :
- Dual
- Datasheets
- BC847CTT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC847CTT1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847CTT1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CTT1 Applications
There are a lot of ON Semiconductor
BC847CTT1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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