BC847CMTF
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- Mfr.Part #
- BC847CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 6,074
- In Stock ：
- 6,074
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Power Dissipation :
- 310mW
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 200mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 1.3mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Base Part Number :
- BC847
- Transistor Application :
- SWITCHING
- Weight :
- 30mg
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 310mW
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 45V
- Voltage - Rated DC :
- 45V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Height :
- 930μm
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Transition Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 300MHz
- Current Rating :
- 100mA
- Frequency :
- 300MHz
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 2.92mm
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- hFE Min :
- 110
- Published :
- 2011
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- BC847CMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847CMTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC847CMTF Applications
There are a lot of ON Semiconductor
BC847CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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