BC847C

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

100 MHz

Configuration :

Single

Subcategory :

Other Transistors

RoHS :

Compliant

Collector Emitter Saturation Voltage :

200 mV

Collector Emitter Voltage (VCEO) :

45 V

Number of Pins :

3

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

0.31 W

Collector Base Voltage (VCBO) :

50 V

JESD-30 Code :

R-PDSO-G3

Height :

1.1 mm

Ambient Temperature Range High :

150 °C

Transition Frequency :

100 MHz

Max Operating Temperature :

150 °C

Emitter Base Voltage (VEBO) :

6 V

Terminal Finish :

Matte Tin (Sn) - annealed

HTS Code :

8541.21.00

Current :

1 A

Power Dissipation :

250 mW

JESD-609 Code :

e3

Number of Terminals :

3

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Pin Count :

3

Terminal Form :

Gull wing

Min Operating Temperature :

-65 °C

hFE Min :

110

Termination :

SMD/SMT

Collector Current-Max (IC) :

0.1 A

Terminal Position :

Dual

Max Power Dissipation :

250 mW

Mount :

Reverse

DC Current Gain-Min (hFE) :

420

Surface Mount :

yes

JEDEC-95 Code :

TO-236

Max Junction Temperature (Tj) :

150 °C

Polarity :

NPN

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

45 V

Voltage :

45 V

Manufacturer :

Diotec Semiconductor AG

Max Collector Current :

100 mA

Collector-Emitter Voltage-Max :

45 V