BC847BWH6327XTSA1
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- Mfr.Part #
- BC847BWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 42,707
- In Stock ：
- 42,707
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Max Power Dissipation :
- 250mW
- hFE Min :
- 200
- Current - Collector (Ic) (Max) :
- 100mA
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 250mW
- Package / Case :
- SC-70, SOT-323
- Termination :
- SMD/SMT
- Factory Lead Time :
- 4 Weeks
- Length :
- 2mm
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Base Part Number :
- BC847
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Frequency :
- 250MHz
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Height :
- 800μm
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Published :
- 2007
- Transition Frequency :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 1.25mm
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 600mV
- Collector Emitter Saturation Voltage :
- 600mV
- Halogen Free :
- Halogen Free
- Number of Terminations :
- 3
- Datasheets
- BC847BWH6327XTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BWH6327XTSA1 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 250MHz.The maximum collector current is 100mA volts.
BC847BWH6327XTSA1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
BC847BWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC847BWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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