BC847BW

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

Single

Collector Emitter Saturation Voltage :

200 mV

Collector Base Voltage (VCBO) :

50 V

Terminal Position :

Dual

Height :

1.1 mm

Collector Emitter Breakdown Voltage :

45 V

Polarity/Channel Type :

NPN

Power Dissipation :

200 mW

REACH SVHC :

No SVHC

Max Power Dissipation :

200 mW

Emitter Base Voltage (VEBO) :

6 V

Collector Emitter Voltage (VCEO) :

45 V

Package Shape :

RECTANGULAR

Min Operating Temperature :

-65 °C

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

260

hFE Min :

110

Max Operating Temperature :

150 °C

Pin Count :

3

Polarity :

NPN

Subcategory :

Other Transistors

Reach Compliance Code :

Compliant

Number of Elements :

1

RoHS :

Compliant

Number of Pins :

3

DC Current Gain-Min (hFE) :

200

Ambient Temperature Range High :

150 °C

Max Junction Temperature (Tj) :

150 °C

Number of Terminals :

3

Qualification Status :

Not Qualified

Collector-Emitter Voltage-Max :

45 V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Surface Mount :

yes

Collector Current-Max (IC) :

0.1 A

Manufacturer :

Diotec Semiconductor AG

Transition Frequency :

100 MHz

ECCN Code :

EAR99

Max Collector Current :

100 mA