BC847BTT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

45V

Number of Pins :

3

Collector Emitter Breakdown Voltage :

45V

Max Collector Current :

100mA

Power Dissipation :

300mW

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

6V

Halogen Free :

Halogen Free

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BC847*TT

Length :

1.8mm

Published :

2004

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Contact Plating :

Tin

Transistor Type :

NPN

Max Breakdown Voltage :

45V

Power - Max :

225mW

Number of Terminations :

3

ECCN Code :

EAR99

Lead Free :

Lead Free

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Gain Bandwidth Product :

100MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Package / Case :

SC-75, SOT-416

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Max Power Dissipation :

200mW

Width :

900μm

Voltage - Rated DC :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Collector Emitter Saturation Voltage :

600mV

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

hFE Min :

200

Collector Base Voltage (VCBO) :

50V

Transistor Element Material :

SILICON

Surface Mount :

yes

Pin Count :

3

Height :

900μm

Current Rating :

100mA

Terminal Position :

Dual

Frequency :

100MHz

Element Configuration :

Single

Transition Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ