BC847BMB,315
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- Mfr.Part #
- BC847BMB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 26,518
- In Stock ：
- 26,518
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-XFDFN
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- BC847
- Element Configuration :
- Single
- Max Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2011
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Power Dissipation :
- 250mW
- hFE Min :
- 200
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 200mV
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC847BMB,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847BMB,315 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847BMB,315 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847BMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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