BC847BLT1G
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- Mfr.Part #
- BC847BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 34,879
- In Stock ：
- 34,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- hFE Min :
- 200
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Voltage - Rated DC :
- 45V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Width :
- 1.397mm
- Pin Count :
- 3
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 45V
- Length :
- 3.0226mm
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Published :
- 2005
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Current Rating :
- 100mA
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Type :
- GENERAL PURPOSE
- Packaging :
- Cut Tape (CT)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Height :
- 1.016mm
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- REACH SVHC :
- No SVHC
- Datasheets
- BC847BLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BLT1G Applications
There are a lot of ON Semiconductor
BC847BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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