BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 33,894
- In Stock ：
- 33,894
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Base Part Number :
- BC847
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Width :
- 1.4mm
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 1.1mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 7.994566mg
- Factory Lead Time :
- 19 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Length :
- 3.05mm
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 300MHz
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA
- Element Configuration :
- Single
- Additional Feature :
- High Reliability
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 90mV
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Position :
- Dual
- Power Dissipation :
- 310mW
- Max Collector Current :
- 200mA
- REACH SVHC :
- No SVHC
- hFE Min :
- 200
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Transition Frequency :
- 300MHz
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC847B
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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