BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 33,894
- In Stock ：
- 33,894
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Transition Frequency :
- 300MHz
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Height :
- 1.1mm
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Base Part Number :
- BC847
- Current - Collector Cutoff (Max) :
- 15nA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 200mA
- Factory Lead Time :
- 19 Weeks
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- hFE Min :
- 200
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -65°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 300MHz
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Length :
- 3.05mm
- Additional Feature :
- High Reliability
- Collector Emitter Saturation Voltage :
- 90mV
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 100mA
- Mount :
- Surface Mount
- Power Dissipation :
- 310mW
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Published :
- 2012
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Junction Temperature (Tj) :
- 150°C
- Weight :
- 7.994566mg
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC847B
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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