BC847AWT1G
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- Mfr.Part #
- BC847AWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 1,821
- In Stock ：
- 1,821
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 90
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Power Dissipation :
- 150mW
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Width :
- 1.35mm
- Current Rating :
- 100mA
- Length :
- 2.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Voltage - Rated DC :
- 45V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Power Dissipation :
- 150mW
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Height :
- 900μm
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Published :
- 2005
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- SC-70, SOT-323
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Datasheets
- BC847AWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AWT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847AWT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847AWT1G Applications
There are a lot of ON Semiconductor
BC847AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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