BC847AWT1
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- Mfr.Part #
- BC847AWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 45V 100MA SOT-323
- Stock
- 25,042
- In Stock ：
- 25,042
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 150mW
- REACH SVHC :
- No SVHC
- Length :
- 2.2mm
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Halogen Free :
- Halogen Free
- Current Rating :
- 100mA
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- hFE Min :
- 90
- Height :
- 900μm
- Voltage - Rated DC :
- 45V
- Surface Mount :
- yes
- Width :
- 1.35mm
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 600mV
- Package / Case :
- SC-70, SOT-323
- Max Breakdown Voltage :
- 45V
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Published :
- 2005
- Number of Elements :
- 1
- Datasheets
- BC847AWT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AWT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847AWT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847AWT1G Applications
There are a lot of ON Semiconductor
BC847AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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