BC847A-7-F
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- Mfr.Part #
- BC847A-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 6,809
- In Stock ：
- 6,809
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 300mW
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Frequency :
- 300MHz
- Pin Count :
- 3
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- hFE Min :
- 110
- Number of Elements :
- 1
- Max Power Dissipation :
- 300mW
- Operating Temperature :
- -65°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Length :
- 3.05mm
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transition Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Height :
- 1mm
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Base Part Number :
- BC847
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Termination :
- SMD/SMT
- Published :
- 2008
- Current - Collector Cutoff (Max) :
- 15nA
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 350mW
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Element Configuration :
- Single
- Datasheets
- BC847A-7-F
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847A-7-F Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC847A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847A-7-F Applications
There are a lot of Diodes Incorporated
BC847A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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