BC846BLT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Gain Bandwidth Product :

100MHz

Peak Reflow Temperature (Cel) :

260

Width :

1.3mm

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

ECCN Code :

EAR99

Transition Frequency :

100MHz

Current Rating :

100mA

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

65V

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

15nA ICBO

Max Breakdown Voltage :

65V

Voltage - Rated DC :

65V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Transistor Type :

NPN

Max Collector Current :

100mA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

80V

Halogen Free :

Halogen Free

REACH SVHC :

No SVHC

Pbfree Code :

yes

Number of Terminations :

3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Collector Emitter Saturation Voltage :

600mV

Published :

2005

Number of Elements :

1

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Frequency :

100MHz

Terminal Position :

Dual

Surface Mount :

yes

Lead Free :

Lead Free

hFE Min :

200

Packaging :

Cut Tape (CT)

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Height :

940μm

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

65V

Type :

GENERAL PURPOSE

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Noise Figure :

10 dB

Transistor Application :

SWITCHING