BC846ALT3G
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- Mfr.Part #
- BC846ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 21,091
- In Stock ：
- 21,091
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 65V
- Collector Emitter Voltage (VCEO) :
- 65V
- hFE Min :
- 110
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 65V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 600mV
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3.04mm
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Published :
- 2007
- Width :
- 1.4mm
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Current Rating :
- 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Height :
- 1.01mm
- Collector Emitter Breakdown Voltage :
- 65V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Datasheets
- BC846ALT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846ALT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.
BC846ALT3G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846ALT3G Applications
There are a lot of ON Semiconductor
BC846ALT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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