BC846ALT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

2.9mm

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Surface Mount :

yes

Max Power Dissipation :

300mW

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Frequency :

100MHz

Published :

2005

Radiation Hardening :

No

ECCN Code :

EAR99

hFE Min :

110

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Operating Temperature :

-55°C~150°C TJ

Height :

940μm

Collector Emitter Saturation Voltage :

600mV

Mounting Type :

Surface Mount

Number of Elements :

1

Pbfree Code :

yes

Width :

1.3mm

Element Configuration :

Single

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Base Voltage (VCBO) :

80V

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

100MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

65V

Voltage - Rated DC :

65V

Gain Bandwidth Product :

100MHz

Number of Terminations :

3

Terminal Form :

Gull wing

Current Rating :

100mA

Collector Emitter Breakdown Voltage :

65V

Max Collector Current :

100mA

Terminal Position :

Dual

Max Breakdown Voltage :

65V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Power Dissipation :

300mW

JESD-609 Code :

e3

Halogen Free :

Halogen Free

Transistor Type :

NPN

Pin Count :

3