BC636

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Min Operating Temperature :

-65°C

Collector Emitter Saturation Voltage :

-500mV

Frequency :

100MHz

Number of Pins :

3

Current - Collector (Ic) (Max) :

1A

RoHS Status :

RoHS Compliant

Gain Bandwidth Product :

100MHz

Voltage - Collector Emitter Breakdown (Max) :

45V

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Max Power Dissipation :

1W

Frequency - Transition :

100MHz

Weight :

201mg

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

6.35mm

hFE Min :

40

Mounting Type :

Through Hole

Voltage - Rated DC :

-45V

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

500mV

Supplier Device Package :

TO-92-3

Termination :

Through Hole

Packaging :

Bulk

Power - Max :

1W

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Width :

6.35mm

Element Configuration :

Single

Transistor Type :

PNP

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Base Part Number :

BC636

Collector Base Voltage (VCBO) :

-45V

Power Dissipation :

1W

Polarity :

PNP

Current Rating :

-1A

Emitter Base Voltage (VEBO) :

-5V

Height :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

45V

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Elements :

1

REACH SVHC :

No SVHC