BC635RL1
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- Mfr.Part #
- BC635RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92
- Stock
- 17,863
- In Stock ：
- 17,863
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Continuous Collector Current :
- 1A
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- HTS Code :
- 8541.21.00.75
- hFE Min :
- 25
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- Element Configuration :
- Single
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- 500mV
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Current Rating :
- 1A
- Base Part Number :
- BC635
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- 240
- Collector Base Voltage (VCBO) :
- 45V
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- EUROPEAN PART NUMBER
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e0
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Transistor Element Material :
- SILICON
- Datasheets
- BC635RL1
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC635RL1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 200MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
BC635RL1 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz
BC635RL1 Applications
There are a lot of ON Semiconductor
BC635RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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