BC635RL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

1A

hFE Min :

25

Reach Compliance Code :

Unknown

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

45V

Collector Base Voltage (VCBO) :

45V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Power Dissipation :

625mW

ECCN Code :

EAR99

Transistor Type :

NPN

Number of Pins :

3

Published :

2005

Mount :

Through Hole

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

3

Transistor Element Material :

SILICON

Frequency :

200MHz

Continuous Collector Current :

1A

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e1

Number of Terminations :

3

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

EUROPEAN PART NUMBER

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

45V

Mounting Type :

Through Hole

Base Part Number :

BC635

Gain Bandwidth Product :

200MHz

Voltage - Rated DC :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

1A

Number of Elements :

1

Collector Emitter Saturation Voltage :

500mV

Transition Frequency :

200MHz