BC635
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- Mfr.Part #
- BC635
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92-3
- Stock
- 10,372
- In Stock ：
- 10,372
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- Length :
- 5.2mm
- Weight :
- 201mg
- Height :
- 5.33mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1W
- Frequency - Transition :
- 100MHz
- Width :
- 4.19mm
- REACH SVHC :
- No SVHC
- Base Part Number :
- BC635
- Power Dissipation :
- 1W
- Max Operating Temperature :
- 150°C
- Current Rating :
- 1A
- Voltage - Rated DC :
- 45V
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Elements :
- 1
- Min Operating Temperature :
- -65°C
- Max Power Dissipation :
- 1W
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 45V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Max Collector Current :
- 1A
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Supplier Device Package :
- TO-92-3
- Polarity :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- BC635
BC635 Documents
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC635 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The product comes in the supplier device package of TO-92-3.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1A volts at its maximum.
BC635 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3
BC635 Applications
There are a lot of ON Semiconductor
BC635 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BC635,112 | onsemi | 15,268 | TRANS NPN 45V 1A TO92-3 |
| BC635,116 | onsemi | 24,942 | TRANS NPN 45V 1A TO92-3 |
| BC635-16,126 | onsemi | 21,400 | TRANS NPN 45V 1A TO92-3 |
| BC635RL1 | onsemi | 17,863 | TRANS NPN 45V 1A TO92 |
| BC635RL1G | onsemi | 44,033 | TRANS NPN 45V 1A TO92 |
| BC635ZL1 | onsemi | 17,204 | TRANS NPN 45V 1A TO92 |
| BC635ZL1G | onsemi | 40,811 | TRANS NPN 45V 1A TO92 |
| BC635_D26Z | onsemi | 15,244 | TRANS NPN 45V 1A TO92-3 |
| BC635_D27Z | onsemi | 25,621 | TRANS NPN 45V 1A TO92-3 |
| BC635_D75Z | onsemi | 3,022 | TRANS NPN 45V 1A TO92-3 |
| BC635_J35Z | onsemi | 39,137 | TRANS NPN 45V 1A TO92-3 |
| BC635_L34Z | onsemi | 11,084 | TRANS NPN 45V 1A TO92-3 |
| BC636 | onsemi | 1,259 | TRANS PNP 45V 1A TO92-3 |
| BC636 | onsemi | 6,559 | TRANS PNP 45V 1A TO92-3 |
| BC636,116 | onsemi | 41,321 | TRANS PNP 45V 1A TO92-3 |
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