AT-41435G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Power - Max :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

10dB ~ 18.5dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 8V

Noise Figure (dB Typ @ f) :

1.3dB ~ 3dB @ 1GHz ~ 4GHz

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

60mA

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Transistor Type :

NPN

Packaging :

Bulk

Highest Frequency Band :

C B

Published :

2002

Number of Terminations :

4

Voltage - Collector Emitter Breakdown (Max) :

12V

Power Dissipation-Max (Abs) :

0.5W

Frequency - Transition :

8GHz

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

X-CXMW-F4

Mounting Type :

Surface Mount

Configuration :

Single

Transition Frequency :

8000MHz

Terminal Form :

Flat

Number of Elements :

1

Terminal Position :

UNSPECIFIED

Operating Temperature :

150°C TJ

HTS Code :

8541.21.00.40

ECCN Code :

EAR99

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Package / Case :

4-SMD (35 micro-X)

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260