AT-41435G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

10dB ~ 18.5dB

Noise Figure (dB Typ @ f) :

1.3dB ~ 3dB @ 1GHz ~ 4GHz

Power - Max :

500mW

Number of Terminations :

4

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

0.5W

Packaging :

Bulk

JESD-30 Code :

X-CXMW-F4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V

Terminal Form :

Flat

Published :

2002

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Highest Frequency Band :

C B

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Transition Frequency :

8000MHz

Transistor Element Material :

SILICON

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

HIGH RELIABILITY, LOW NOISE

HTS Code :

8541.21.00.40

Surface Mount :

yes

Package / Case :

4-SMD (35 micro-X)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

60mA

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Frequency - Transition :

8GHz

Terminal Position :

UNSPECIFIED

Polarity/Channel Type :

NPN