APTC80DA15T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

12

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Terminal Position :

UPPER

JESD-609 Code :

e1

Number of Pins :

1

Package / Case :

SP1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

277W

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Continuous Drain Current (ID) :

28A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

Avalanche Energy Rating (Eas) :

670 mJ

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Vgs (Max) :

±30V

Published :

2007

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~150°C TJ

Power Dissipation-Max :

277W Tc

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

12

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Bulk

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount