APT45GR65B2DU30

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

543W

Turn Off Time-Nom (toff) :

175 ns

Reverse Recovery Time :

80 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Transistor Element Material :

SILICON

Input Type :

Standard

Turn On Time :

47 ns

Number of Elements :

1

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

22 Weeks

Test Condition :

433V, 45A, 4.3 Ω, 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

2.4V

Max Collector Current :

118A

Mount :

Through Hole

Td (on/off) @ 25°C :

15ns/100ns

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

650V

IGBT Type :

NPT

Operating Temperature :

-55°C~150°C TJ

Power - Max :

543W

Polarity/Channel Type :

N-Channel

Published :

2001

JESD-609 Code :

e1

Gate Charge :

203nC

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 45A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN SILVER COPPER

ECCN Code :

EAR99

JEDEC-95 Code :

TO-247AD

Package / Case :

TO-247-3

Current - Collector Pulsed (Icm) :

224A