APT43GA90B

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

337W

Turn On Time :

28 ns

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Breakdown Voltage :

900V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Number of Elements :

1

Switching Energy :

875μJ (on), 425μJ (off)

Pin Count :

3

Turn Off Time-Nom (toff) :

246 ns

IGBT Type :

PT

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Packaging :

Tube

Published :

1999

JESD-609 Code :

e1

Gate Charge :

116nC

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Mounting Type :

Through Hole

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

900V

Factory Lead Time :

6 Weeks

Additional Feature :

LOW CONDUCTION LOSSES

Test Condition :

600V, 25A, 4.7 Ω, 15V

Td (on/off) @ 25°C :

12ns/82ns

Series :

POWER MOS 8™

Element Configuration :

Single

Power - Max :

337W

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 25A

Transistor Application :

POWER CONTROL

Package / Case :

TO-247-3

Max Collector Current :

78A

Current - Collector Pulsed (Icm) :

129A

Mount :

Through Hole

Polarity/Channel Type :

N-Channel