APT20GF120BRDQ1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

3.2V

Element Configuration :

Single

Mounting Type :

Through Hole

Switching Energy :

895μJ (on), 840μJ (off)

Gate Charge :

100nC

Case Connection :

COLLECTOR

Voltage - Rated DC :

1.2kV

Test Condition :

800V, 15A, 4.3 Ω, 15V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mount :

Through Hole

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 15A

Radiation Hardening :

No

Transistor Application :

POWER CONTROL

Published :

2005

Gate-Emitter Thr Voltage-Max :

6.5V

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

19 ns

Terminal Finish :

TIN SILVER COPPER

Turn Off Time-Nom (toff) :

255 ns

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

36A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

1.2kV

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Current - Collector Pulsed (Icm) :

64A

JESD-609 Code :

e1

Input Type :

Standard

IGBT Type :

NPT

Number of Terminations :

3

Max Power Dissipation :

200W

Lead Free :

Lead Free

Number of Elements :

1

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

10ns/120ns

Max Collector Current :

36A

RoHS Status :

RoHS Compliant