APT13005SU-G1
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- Mfr.Part #
- APT13005SU-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 3.2A TO126
- Stock
- 1,817
- In Stock ：
- 1,817
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Height :
- 11.2mm
- Number of Terminations :
- 3
- Transition Frequency :
- 4MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 5 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 450V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 750mA, 3A
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 9V
- Length :
- 8.2mm
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- NPN
- Published :
- 2016
- Max Collector Current :
- 3.2A
- Current - Collector (Ic) (Max) :
- 3.2A
- Collector Emitter Voltage (VCEO) :
- 1V
- Gain Bandwidth Product :
- 4MHz
- Element Configuration :
- Single
- Packaging :
- Bulk
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 10V
- Width :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 20W
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Datasheets
- APT13005SU-G1
NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
APT13005SU-G1 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 750mA, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.4MHz is present in the transition frequency.Maximum collector currents can be below 3.2A volts.
APT13005SU-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 750mA, 3A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005SU-G1 Applications
There are a lot of Diodes Incorporated
APT13005SU-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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