APT13005DTF-G1

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Mfr.Part #
APT13005DTF-G1
Manufacturer
Diodes Incorporated
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 450V 4A TO220F-3
Stock
18,549
In Stock :
18,549

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-65°C~150°C TJ
Package / Case :
TO-220-3 Full Pack
Reach Compliance Code :
not_compliant
ECCN Code :
EAR99
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
450V
Max Collector Current :
4A
JEDEC-95 Code :
TO-220AB
Transition Frequency :
4MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
900mV @ 1A, 4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
15 Weeks
Current - Collector (Ic) (Max) :
4A
Polarity/Channel Type :
NPN
Transistor Type :
NPN
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Max Power Dissipation :
28W
Published :
2013
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
450V
Gain Bandwidth Product :
4MHz
Case Connection :
Isolated
Contact Plating :
Tin
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Emitter Base Voltage (VEBO) :
9V
Collector Emitter Saturation Voltage :
900mV
Number of Terminations :
3
Weight :
2.270003g
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
APT13005DTF-G1
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13005DTF-G1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Number of Terminations:3, APT13005DTF-G1 pinout, APT13005DTF-G1 datasheet PDF, APT13005DTF-G1 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13005DTF-G1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole

APT13005DTF-G1 Overview


This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 900mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.In this part, there is a transition frequency of 4MHz.The maximum collector current is 4A volts.

APT13005DTF-G1 Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


APT13005DTF-G1 Applications


There are a lot of Diodes Incorporated
APT13005DTF-G1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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