APT13003NZTR-G1

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Mfr.Part #
APT13003NZTR-G1
Manufacturer
Diodes Incorporated
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 900V 1.5A TO92
Stock
40,324
In Stock :
40,324

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Terminal Form :
Wire
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
400mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic :
400mV @ 250mA, 1A
Max Power Dissipation :
1W
Reach Compliance Code :
not_compliant
Transistor Type :
NPN
Published :
2015
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
900V
Number of Elements :
1
Frequency - Transition :
4MHz
Turn On Time-Max (ton) :
4500ns
Packaging :
Tape and Box (TB)
Max Breakdown Voltage :
900V
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Power - Max :
1W
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
15 Weeks
Transition Frequency :
4MHz
Max Collector Current :
1.5A
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
JESD-30 Code :
O-PBCY-W3
Terminal Position :
BOTTOM
Datasheets
APT13003NZTR-G1
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13003NZTR-G1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), APT13003NZTR-G1 pinout, APT13003NZTR-G1 datasheet PDF, APT13003NZTR-G1 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13003NZTR-G1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated APT13003NZTR-G1


NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

APT13003NZTR-G1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 5 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 900V volts.When collector current reaches its maximum, it can reach 1.5A volts.

APT13003NZTR-G1 Features


the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 400mV @ 250mA, 1A
a transition frequency of 4MHz


APT13003NZTR-G1 Applications


There are a lot of Diodes Incorporated
APT13003NZTR-G1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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