2SD2561
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- Mfr.Part #
- 2SD2561
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- 3-ESIP
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 17A MT-200
- Stock
- 2,183
- In Stock ：
- 2,183
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package Type :
- MT-200
- Transistor Type :
- NPN - Darlington
- Collector-Emitter Voltage :
- 150(V)
- Collector-Base Voltage :
- 150(V)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 10A 4V
- Pin Count :
- 3
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 200W
- Series :
- -
- Configuration :
- DARLINGTON WITH BUILT-IN RESISTOR
- Manufacturer :
- Sanken Electric Co Ltd
- Transistor Application :
- AMPLIFIER
- Frequency - Transition :
- 70MHz
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Operating Temperature Classification :
- Military
- Operating Temp Range :
- -55C to 150C
- Max Collector Current :
- 17A
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- 3-ESIP
- Mounting Type :
- Through Hole
- Collector Current (DC) :
- 17(A)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Current-Max (IC) :
- 17 A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 150V
- Current - Collector (Ic) (Max) :
- 17 A
- Collector Emitter Voltage (VCEO) :
- 2.5V
- Polarity :
- NPN
- Surface Mount :
- No
- Mounting :
- Through Hole
- Rad Hardened :
- No
- Terminal Position :
- Single
- Supplier Device Package :
- MT-200
- Product Status :
- Obsolete
- Collector-Emitter Voltage-Max :
- 150 V
- Terminal Form :
- THROUGH-HOLE
- Number of Terminals :
- 3
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 200(W)
- Emitter-Base Voltage :
- 5(V)
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Maximum Collector Cut-off Current :
- 100
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Package :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 10A
- Base-Emitter Saturation Voltage (Max) :
- 3(V)
- Published :
- 2001
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Transition Frequency :
- 70MHz
- DC Current Gain-Min (hFE) :
- 5000
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Power - Max :
- 200W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- 2SD2561
NPN - Darlington 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN 3-ESIP Bulk Through Hole
2SD2561 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5000 @ 10A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 10mA, 10A.A transition frequency of 70MHz is present in the part.The product comes in the supplier device package of MT-200.There is a setting of 150 V for maximal collector-Emitter voltage.A 150 V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 17A volts at its maximum.
2SD2561 Features
the DC current gain for this device is 5000 @ 10A 4V
the vce saturation(Max) is 2.5V @ 10mA, 10A
a transition frequency of 70MHz
the supplier device package of MT-200
2SD2561 Applications
There are a lot of Sanken
2SD2561 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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