2SD2560
- Mfr.Part #
- 2SD2560
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 15A TO3P
- Stock
- 6,762
- In Stock :
- 6,762
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature Classification :
- Military
- Current - Collector (Ic) (Max) :
- 15A
- Package / Case :
- TO-3P-3, SC-65-3
- Mounting Type :
- Through Hole
- Base-Emitter Saturation Voltage (Max) :
- 3(V)
- Package Type :
- TO-3P
- Supplier Device Package :
- TO-3P
- Frequency - Transition :
- 70MHz
- Polarity :
- NPN
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Maximum Collector Cut-off Current :
- 100
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Product Status :
- Active
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- Transition Frequency :
- 70MHz
- Operating Temp Range :
- -55C to 150C
- DC Current Gain-Min (hFE) :
- 5000
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Power - Max :
- 130W
- Packaging :
- Bulk
- Collector Current-Max (IC) :
- 15 A
- Transistor Type :
- NPN - Darlington
- Rad Hardened :
- No
- Manufacturer :
- Sanken Electric Co Ltd
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Pin Count :
- 3
- Collector-Emitter Voltage :
- 150(V)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 10A 4V
- Series :
- --
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 24 Weeks
- Collector Current (DC) :
- 15(A)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Package :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- DARLINGTON WITH BUILT-IN RESISTOR
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 10A
- Mounting :
- Through Hole
- Surface Mount :
- No
- Collector-Base Voltage :
- 150(V)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector-Emitter Voltage-Max :
- 150 V
- Emitter-Base Voltage :
- 5(V)
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- Power Dissipation :
- 130(W)
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Published :
- 1999
- Datasheets
- 2SD2560

NPN - Darlington 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Bulk Through Hole
2SD2560 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 5000 @ 10A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 70MHz in the part.There is no device package available from the supplier for this product.150 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SD2560 Features
the DC current gain for this device is 5000 @ 10A 4V
the vce saturation(Max) is 2.5V @ 10mA, 10A
a transition frequency of 70MHz
the supplier device package of TO-3P
2SD2560 Applications
There are a lot of Sanken
2SD2560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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