2SD2351T106V

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Mfr.Part #
2SD2351T106V
Manufacturer
ROHM Semiconductor
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS NPN 50V 0.15A UMT3
Stock
8,985
In Stock :
8,985

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
ECCN Code :
EAR99
Transistor Type :
NPN
hFE Min :
820
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
12V
Time@Peak Reflow Temperature-Max (s) :
10
RoHS Status :
ROHS3 Compliant
Max Collector Current :
150mA
Pin Count :
3
Element Configuration :
Single
REACH SVHC :
No SVHC
JESD-609 Code :
e1
Number of Pins :
3
Pbfree Code :
yes
Continuous Collector Current :
150mA
Power Dissipation :
200mW
Factory Lead Time :
13 Weeks
Contact Plating :
Copper, Silver, Tin
Package / Case :
SC-70, SOT-323
Max Breakdown Voltage :
50V
Terminal Position :
Dual
Frequency :
250MHz
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 5mA, 50mA
Mount :
Surface Mount
Current Rating :
150mA
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
300nA ICBO
Collector Base Voltage (VCBO) :
60V
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
820 @ 1mA 5V
Gain Bandwidth Product :
250MHz
Polarity/Channel Type :
NPN
Published :
2004
Collector Emitter Voltage (VCEO) :
50V
Max Power Dissipation :
200mW
Voltage - Rated DC :
50V
Base Part Number :
2SD2351
Transition Frequency :
250MHz
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
50V
Datasheets
2SD2351T106V
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2351T106V from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:SC-70, SOT-323, Base Part Number:2SD2351, Number of Terminations:3, 2SD2351T106V pinout, 2SD2351T106V datasheet PDF, 2SD2351T106V amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2351T106V ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SD2351T106V


NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount

2SD2351T106V Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 820 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.

2SD2351T106V Features


the DC current gain for this device is 820 @ 1mA 5V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz


2SD2351T106V Applications


There are a lot of ROHM Semiconductor
2SD2351T106V applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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