2SD2351T106V
- Mfr.Part #
- 2SD2351T106V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3
- Stock
- 8,985
- In Stock :
- 8,985
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- hFE Min :
- 820
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 150mA
- Pin Count :
- 3
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Continuous Collector Current :
- 150mA
- Power Dissipation :
- 200mW
- Factory Lead Time :
- 13 Weeks
- Contact Plating :
- Copper, Silver, Tin
- Package / Case :
- SC-70, SOT-323
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Frequency :
- 250MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Mount :
- Surface Mount
- Current Rating :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Gain Bandwidth Product :
- 250MHz
- Polarity/Channel Type :
- NPN
- Published :
- 2004
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 200mW
- Voltage - Rated DC :
- 50V
- Base Part Number :
- 2SD2351
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- 2SD2351T106V

NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2351T106V Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 820 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SD2351T106V Features
the DC current gain for this device is 820 @ 1mA 5V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2351T106V Applications
There are a lot of ROHM Semiconductor
2SD2351T106V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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