2SD2226KT146W
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- Mfr.Part #
- 2SD2226KT146W
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMT3
- Stock
- 11,195
- In Stock ：
- 11,195
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- Length :
- 3mm
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2004
- Current Rating :
- 150mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Max Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 12V
- Base Part Number :
- 2SD2226
- Voltage - Rated DC :
- 50V
- Number of Terminations :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 13 Weeks
- Max Collector Current :
- 150mA
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 1200
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.8mm
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-30 Code :
- R-PDSO-G3
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Height :
- 1.2mm
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 59
- JESD-609 Code :
- e1
- Continuous Collector Current :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- TIN SILVER COPPER
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Datasheets
- 2SD2226KT146W
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2226KT146W Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 1mA 5V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 150mA.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
2SD2226KT146W Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2226KT146W Applications
There are a lot of ROHM Semiconductor
2SD2226KT146W applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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