2SD2212T100
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- Mfr.Part #
- 2SD2212T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 2A MPT3
- Stock
- 515
- In Stock ：
- 515
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Published :
- 2004
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Current Rating :
- 2A
- Termination :
- SMD/SMT
- Package / Case :
- TO-243AA
- Polarity :
- NPN
- hFE Min :
- 1000
- Power Dissipation :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 2W
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 70V
- Collector Emitter Voltage (VCEO) :
- 70V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Frequency - Transition :
- 80MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Contact Plating :
- Copper, Tin
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e2
- Base Part Number :
- 2SD2212
- Datasheets
- 2SD2212T100
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2SD2212T100 Overview
In this device, the DC current gain is 1000 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SD2212T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
2SD2212T100 Applications
There are a lot of ROHM Semiconductor
2SD2212T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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