2SD2167T100P
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- Mfr.Part #
- 2SD2167T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 31V 2A MPT3
- Stock
- 19,442
- In Stock ：
- 19,442
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2W
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 2A
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 1V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 31V
- Pbfree Code :
- yes
- JESD-609 Code :
- e2
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- HTS Code :
- 8541.21.00.95
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 82
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Base Voltage (VCBO) :
- 35V
- Collector Emitter Breakdown Voltage :
- 31V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-F3
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Published :
- 2002
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA 3V
- Current Rating :
- 2A
- Package / Case :
- TO-243AA
- Datasheets
- 2SD2167T100P
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2167T100P Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 500mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 2A volts at its maximum.
2SD2167T100P Features
the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
2SD2167T100P Applications
There are a lot of ROHM Semiconductor
2SD2167T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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