2SC5551AF-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

300mA

Element Configuration :

Single

Lead Free :

Lead Free

Pin Count :

3

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

135 @ 50mA 5V

Factory Lead Time :

6 Weeks

Case Connection :

COLLECTOR

Terminal Form :

Flat

Power Dissipation :

1.3W

Transition Frequency :

3500MHz

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Highest Frequency Band :

S B

Operating Temperature :

150°C TJ

Package / Case :

TO-243AA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

1.5mm

Mounting Type :

Surface Mount

Surface Mount :

yes

Number of Pins :

3

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

2V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.3W

Published :

2009

Length :

4.5mm

Collector Emitter Saturation Voltage :

300mV

Max Breakdown Voltage :

30V

Number of Elements :

1

Width :

2.5mm

Collector-Base Capacitance-Max :

4pF

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

30V

Collector Base Voltage (VCBO) :

40V

Continuous Collector Current :

300mA

Collector Emitter Voltage (VCEO) :

30V

Number of Terminations :

3

Polarity/Channel Type :

NPN

Transistor Type :

NPN

JESD-609 Code :

e6

ECCN Code :

EAR99

Max Frequency :

3.5GHz