2SC5551AE-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation :

1.3W

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Collector-Base Capacitance-Max :

4pF

Max Power Dissipation :

1.3W

Terminal Form :

Flat

Lead Free :

Lead Free

Factory Lead Time :

7 Weeks

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

2V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Operating Temperature :

150°C TJ

Max Collector Current :

300mA

Number of Elements :

1

Package / Case :

TO-243AA

Gain Bandwidth Product :

3.5 GHz

Mounting Type :

Surface Mount

Published :

2009

Pin Count :

3

Surface Mount :

yes

Collector Emitter Saturation Voltage :

300mV

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 50mA 5V

Collector Emitter Breakdown Voltage :

30V

ECCN Code :

EAR99

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Element Configuration :

Single

JESD-609 Code :

e6

Number of Pins :

3

Transistor Type :

NPN

Frequency :

3.5GHz

Transition Frequency :

3500MHz

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)