2SC5226A-4-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Surface Mount :

yes

Element Configuration :

Single

Number of Pins :

3

Noise Figure (dB Typ @ f) :

1dB @ 1GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 20mA 5V

Max Collector Current :

70mA

Number of Elements :

1

Length :

2mm

Mounting Type :

Surface Mount

Contact Plating :

Tin

Pbfree Code :

yes

Additional Feature :

LOW NOISE

JESD-609 Code :

e6

Transistor Type :

NPN

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

10V

Number of Terminations :

3

Pin Count :

3

Max Frequency :

7GHz

Gain Bandwidth Product :

7 GHz

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transition Frequency :

7000MHz

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

2V

Gain :

12dB

Package / Case :

SC-70, SOT-323

RoHS Status :

ROHS3 Compliant

Collector-Base Capacitance-Max :

1.2pF

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

HTS Code :

8541.21.00.75

Transistor Element Material :

SILICON

Published :

2011

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Terminal Position :

Dual

Height :

900μm

Max Breakdown Voltage :

10V

Width :

1.25mm

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

10V