2SC4083T106P
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- Mfr.Part #
- 2SC4083T106P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 11V 0.05A UMT3
- Stock
- 1,910
- In Stock ：
- 1,910
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Collector-Base Capacitance-Max :
- 1.5pF
- Number of Pins :
- 3
- Base Part Number :
- 2SC4083
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Contact Plating :
- Copper, Silver, Tin
- HTS Code :
- 8541.21.00.75
- Terminal Form :
- Gull wing
- Current Rating :
- 50mA
- Gain Bandwidth Product :
- 3.2 GHz
- Continuous Collector Current :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 10mA
- Transition Frequency :
- 3200MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 11V
- Lead Free :
- Lead Free
- Package / Case :
- SC-70, SOT-323
- VCEsat-Max :
- 0.5 V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 11V
- Max Collector Current :
- 50mA
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 3V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 5mA 10V
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 11V
- Mount :
- Surface Mount
- hFE Min :
- 56
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 11V
- Highest Frequency Band :
- S B
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Published :
- 2004
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- 2SC4083T106P
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4083T106P Overview
In this device, the DC current gain is 82 @ 5mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 3V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Input voltage breakdown is available at 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC4083T106P Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC4083T106P Applications
There are a lot of ROHM Semiconductor
2SC4083T106P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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