2SC4024

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter-Base Voltage :

15(V)

Current - Collector (Ic) (Max) :

10A

Frequency - Transition :

24MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 5A

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Collector-Emitter Voltage-Max :

50 V

Number of Terminations :

3

Number of Terminals :

3

Transistor Polarity :

NPN

ECCN Code :

EAR99

Published :

2007

Series :

--

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Package Type :

TO-220F

Mounting Type :

Through Hole

Product Status :

Active

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Power Dissipation :

35(W)

JESD-30 Code :

R-PSFM-T3

Manufacturer :

Sanken Electric Co Ltd

Max Power Dissipation :

35W

Collector Emitter Voltage (VCEO) :

500mV

Transistor Type :

NPN

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

50V

Reach Compliance Code :

Unknown

Number of Elements :

1

Packaging :

Bulk

Max Collector Current :

10A

Package / Case :

TO-220-3 Full Pack

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Collector-Base Voltage :

100(V)

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Bulk

Frequency :

24(MHz)

Terminal Form :

THROUGH-HOLE

Output Power :

Not Required(W)

JEDEC-95 Code :

TO-220AB

Collector Current (DC) :

10(A)

RoHS Status :

RoHS Compliant

Mounting :

Through Hole

Pin Count :

3

Configuration :

Single

Current - Collector Cutoff (Max) :

10μA ICBO

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain-Min (hFE) :

300

Pbfree Code :

yes

Collector Current-Max (IC) :

10 A

Collector-Emitter Voltage :

50(V)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 4V

Category :

Bipolar Power

Mount :

Through Hole

Terminal Position :

Single

Power - Max :

35W

Rad Hardened :

No

Supplier Device Package :

TO-220F

Power Dissipation-Max (Abs) :

35 W

DC Current Gain :

300@1A@4V

Transition Frequency :

24MHz

Transistor Element Material :

SILICON